Single-step lift-off process using chlorobenzene soak on AZ4000 resistsFATHIMULLA, A.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 1, pp 25-27, issn 0734-211XArticle

High-current, planar-doped pseudomorphic Ga_0.4In_0.6As/Al_0.48In_0.52As HEMTsFATHIMULLA, A; HIER, H; ABRAHAMS, J et al.Electronics Letters. 1988, Vol 24, Num 11, pp 717-718, issn 0013-5194Article

High-performance InAlAs/InGaAs HEMT's and MESFET'sFATHIMULLA, A; ABRAHAMS, J; LOUGHRAN, T et al.IEEE electron device letters. 1988, Vol 9, Num 7, pp 328-330, issn 0741-3106Article

High-current pulse-doped GaInAs MESFETFATHIMULLA, A; HIER, H; ABRAHAMS, J et al.Electronics Letters. 1988, Vol 24, Num 8, pp 498-499, issn 0013-5194Article

Transverse acousto-electric voltage spectroscopy in GaAs/Al_xGa_1-x as quantum wellABEDIN, M. N; DAS, P; FATHIMULLA, A et al.Superlattices and microstructures. 1988, Vol 4, Num 3, pp 333-337, issn 0749-6036Article

Submicron-gate In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxyKUANG, J. B; TASKER, P. J; CHEN, Y. K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1136-1138, issn 0003-6951, 3 p.Article

Kink effect in submicrometer-gate MBE-Grown InAlAs/InGaAs/InAlAs heterot-junction MESFET'sKUANG, J. B; TASKER, P. J; WANG, G. W et al.IEEE electron device letters. 1988, Vol 9, Num 12, pp 630-632, issn 0741-3106Article

I/V anomality and device performance of submicrometre-gate Ga_0.47In_0.53As/Al_0.48In_0.52As HEMTKUANG, J. B; TASKER, P. J; CHEN, Y. K et al.Electronics Letters. 1988, Vol 24, Num 25, pp 1571-1572, issn 0013-5194Article